Method for controlling current during programming of memory cells

ABSTRACT

Improved circuitry and methods for programming memory cells of a memory device are disclosed. The improved circuitry and methods operate to isolate the memory cells from potentially damaging electrical energy that can be imposed during a precharge phase that precedes programming of the memory cells. Additionally, the improved circuitry and methods can operate to ensure that programming of the memory cells is performed in a controlled manner using only a program current. The improved circuitry and methods are particularly useful for programming non-volatile memory cells. In one embodiment, the memory device pertains to a semiconductor memory product, such as a semiconductor memory chip or a portable memory card.

CROSS-REFERENCE TO RELATED APPLICATION

This application is related to U.S. application Ser. No. 11/552,472,filed concurrently herewith, and entitled “MEMORY DEVICE FOR CONTROLLINGCURRENT DURING PROGRAMMING OF MEMORY CELLS,” which is herebyincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to memory devices and, more particularly, toprogramming non-volatile memory devices.

2. Description of the Related Art

Memory devices that provide persistent data storage use non-volatilememory cells. The memory devices can typically be implemented bysemiconductor chips. The semiconductor chips can be used internal toelectronic systems or can be used within memory cards that can beremovably attached to electronic systems. Memory cards are commonly usedto store digital data for use with various products (e.g., electronicproducts). Memory cards often use Flash type or EEPROM type memory cellsto store the data. Memory cards have a relatively small form factor andhave been used to store digital data for electronic products (e.g.,portable consumer electronic products). A major supplier of memory cardsis SanDisk Corporation of Sunnyvale, Calif.

Several methods are known for programming non-volatile memory cells. Onemethod applies a programming pulse of a sufficiently long duration toprogram a memory cell. In order to guarantee that every memory cell isable to be programmed using this method, programming time and power areset for worst-case conditions. Accordingly, this “over-provisioning”approach can result in excessive average programming time and power. Inanother method, a series of short, high-voltage programming pulses isapplied to a memory cell. After each programming pulse, anominal-voltage reading pulse is applied to determine whether the memorycell is in a programmed state. If the memory cell is in a programmedstate, no further programming pulses are applied. Otherwise, anadditional programming pulse is applied, and the sequence of reading andprogramming continues until the memory cell is eventually in aprogrammed state. One disadvantage of this approach is the time andpower overhead associated with switching between program and readvoltages. Another disadvantage of this approach is that the use of shortprogramming pulses (as compared to a long, continuous programming pulse)tends to be less energy efficient.

More recently, a method for programming non-volatile memory cells madeuse of detection circuits. While a particular memory cell is beingprogrammed, a detection circuit determines whether the memory cell is ina programmed state. Once the memory cell is detected to have reached theprogrammed state, the programming of the memory cell is terminated.Additional details on this method for programming are provided in U.S.Pat. No. 6,574,145.

Conventionally, non-volatile memory cells require careful control of thecurrent used during a programming operation. One type of non-volatilememory cell is a diode-based non-volatile memory cell which utilizes anantifuse structure. During programming, the antifuse structure is“popped” or “blown” during a program (or write) event. However, thecharacteristics of such memory cells are that the current utilized toprogram the memory cells is directly related to the final read currenton a read event. Hence, accurate control over the program (or write)current is needed in order to later properly read data from the memorycell. This is particularly true for memory cells that are programmed toutilize more than two levels, such as multi-level data storage (e.g.,multi-bit data storage). With multi-level data storage, more than twodistinct levels of current are needed during programming of a singlememory cell. As more levels of current are needed, the accuracy of thecontrol over the program current becomes even more important.

Thus, there is a need for improved approaches to controlling currentssupplied to memory cells during program operations.

SUMMARY OF THE INVENTION

The invention relates to improved circuitry and methods for programmingmemory cells of a memory device. The improved circuitry and methodsoperate to isolate the memory cells from potentially damaging electricalenergy that can be imposed during a precharge phase that precedesprogramming of the memory cells. Additionally, the improved circuitryand methods can operate to ensure that programming of the memory cellsis performed in a controlled manner using only a program current.

The improved circuitry and methods are particularly useful forprogramming non-volatile memory cells. In one embodiment, the memorydevice pertains to a semiconductor memory product, such as asemiconductor memory chip or a portable memory card.

The invention can be implemented in numerous ways, including as amethod, system, device or apparatus. Several embodiments of theinvention are discussed below.

As a method for programming a memory device, one embodiment of theinvention includes at least the acts of: determining a non-volatilememory element within the memory device that is to be programmed;isolating the non-volatile memory element from a conductive line that isused to carry electrical energy to program the non-volatile memoryelement; precharging, subsequent to the isolating, the conductive lineto an energy level suitable for programming the non-volatile memoryelement; coupling, subsequent to the precharging, the non-volatilememory element to the conductive line; and programming, subsequent tothe coupling, the non-volatile memory element via the conductive line.

As a method for programming a memory device, another embodiment of theinvention includes at least the acts of: isolating a memory element froma decoded line; coupling a precharge current to the decoded line;determining whether the decoded line has been precharged; decoupling theprecharge current from the decoded line after the determining determinesthat the decoded line has been precharged; thereafter coupling thememory element to the decoded line; providing a program current to thememory element via the decoded line to program the memory element;determining whether the memory element has been programmed; and removingthe program current once the determining determines that the memoryelement has been programmed.

Other aspects and advantages of the invention will become apparent fromthe following detailed description taken in conjunction with theaccompanying drawings which illustrate, by way of example, theprinciples of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be readily understood by the following detaileddescription in conjunction with the accompanying drawings, wherein likereference numerals designate like structural elements, and in which:

FIG. 1 is a flow diagram of a memory device programming processaccording to one embodiment of the invention.

FIG. 2 is a flow diagram of a memory device programming processaccording to another embodiment of the invention.

FIG. 3 is a block diagram of a memory programming system according toone embodiment of the invention.

FIG. 4 is a block diagram of a memory programming system according toanother embodiment of the invention.

FIG. 5 is a timing diagram according to one embodiment of the invention.

DETAILED DESCRIPTION OF THE INVENTION

The invention relates to improved circuitry and methods for programmingmemory cells of a memory device. The improved circuitry and methodsoperate to isolate the memory cells from potentially damaging electricalenergy that can be imposed during a precharge phase that precedesprogramming of the memory cells. Additionally, the improved circuitryand methods can operate to ensure that programming of the memory cellsis performed in a controlled manner using only a program current.

The improved circuitry and methods are particularly useful forprogramming non-volatile memory cells. In one embodiment, the memorydevice pertains to a semiconductor memory product, such as asemiconductor memory chip or a portable memory card.

Embodiments of this aspect of the invention are discussed below withreference to FIGS. 1-5. However, those skilled in the art will readilyappreciate that the detailed description given herein with respect tothese figures is for explanatory purposes as the invention extendsbeyond these limited embodiments.

FIG. 1 is a flow diagram of a memory device programming process 100according to one embodiment of the invention. The memory device beingprogrammed includes a plurality of memory elements, such as memorycells. Typically, the memory elements are arranged in an array.

The memory device programming process 100 initially determines 102 amemory element to be programmed. Typically, the memory element to beprogrammed is a non-volatile memory element that can be programmed orwritten to store an electrical characteristic representing a digitalvalue. After the memory element to be programmed has been determined102, the memory element is isolated 104 from a conductive line that isused to program the memory element. The conductive line is an electricalconductor provided within the memory device that is utilized to selectthe particular memory element to be programmed. The conductive line can,for example, be a decoded line or some other conductive line used inselecting memory elements to be programmed.

Next, the conductive line is precharged 106. Here, the conductive lineis precharged while the memory element is isolated 104 from theconductive line. Typically, the conductive line has a significant amountof capacitance that delays changes to the voltage potential on theconductive line. For example, when programming a memory element, arelatively high voltage is required to be provided on the conductiveline. By precharging 106 the conductive line, the voltage potential forprogramming can be provided to the conductive line such that theconductive line can quickly reach the proper potential for programmingprior to programming the memory element. Advantageously, the conductiveline can be precharged with a high current source so that the conductiveline can reach the programming potential rapidly.

After the conductive line has been precharged 106, the memory element isconnected 108 to the conductive line. Upon connecting 108 the memoryelement to the conductive line, the memory element begins to beprogrammed. Hence, following the connection 108 of the memory element tothe conductive line, the memory element is programmed 110 usingelectrical energy provided via the conductive line. The electricalenergy can be provided by a program current that is coupled to theconductive line. The program current is typically substantially smallerthan the precharged current so that the programming of the memoryelement can be controlled with high precision and also so that damage tothe memory element that would be potentially caused by the highprecharge current can be prevented. After the memory element has beenprogrammed 110, the memory device programming process 100 is completeand ends.

FIG. 2 is a flow diagram of a memory device programming process 200according to one embodiment of the invention. The memory deviceprogramming process 200 is, for example, suitable for use in programminga memory device having an array of memory elements.

The memory device programming process 200 begins with a decision 202that determines whether a program request (or write request) has beenreceived. When the decision 202 determines that a program request hasnot been received, the memory device programming process 200 awaits sucha request. Alternatively, when the decision 202 determines that aprogram request has been received, the memory device programming process200 continues. In other words, the memory device programming process 200can be deemed invoked when a program request has been received.

Once the memory device programming process 200 continues, the memoryelement to be programmed is disconnected 204 from an associated decodedline that is to be utilized when programming the memory element. Next,precharge of the appropriate decoded line is activated 206. Typically,precharge of the decoded line is provided by a precharge current that iscoupled to the decoded line when precharge of the decoded line isactivated 206. As an example, the precharge current can be about 200-300micro-Amperes (μA).

Next, a decision 208 determines whether precharge of the decoded linehas completed. When the decision 208 determines that precharge of thedecoded line has not completed, then the memory device programmingprocess 200 awaits completion of the precharge. The determination ofwhether precharge of the decoded line has completed can be based on amonitoring the voltage on the decoded line or based on a predeterminedperiod of time. On the other hand, once the decision 208 determines thatprecharge of the decoded line has completed, then precharge of thedecoded line is deactivated 210. Here, precharge of the decoded line isdiscontinued because the decoded line has been fully precharged.

Once the precharge has been deactivated 210, the memory element isconnected 212 to the decoded line. In one embodiment, the memory elementis connected to the decoded line by way of a bitline selection path.After the memory element has been connected 212 to the decoded line, aprogram current is applied 214 to the memory element via the decodedline. As an example, the program current can be about 10-100micro-Amperes (μA). By applying the program current to the memoryelement, the memory element can be programmed. In one implementation,while the memory element is being programmed through use of the programcurrent, the memory element can be monitored to determine when theprogramming has completed. In this regard, a decision 216 determineswhether the memory element has been programmed. In one example,examination of the amount of the supplied program current that flowsthrough the memory element can serve as an indication of whether thememory element has been programmed. In another implementation, thememory element can be programmed using a program current havingprogramming pulses of a fixed duration. In such case, the decision 216can determine that the memory element has been programmed when theprogramming pulses of the fixed duration have been applied.

When the decision 216 determines that the memory element has not yetbeen programmed, the memory device programming process 200 continuesprogramming the memory device until the memory device has beenprogrammed through application of the program current. Once the decision216 determines that the memory element has been programmed, the programcurrent is removed 218 from the memory element. Following the block 218,the memory device programming process 200 ends.

The memory device being programmed includes a plurality of memoryelements, such as memory cells. The memory elements can be non-volatilememory elements. In one embodiment, the memory elements areantifuse-type non-volatile memory elements which each have a diode andan antifuse. When the anti-fuse-type memory elements are programmed,they operate to “pop” or “blow” their antifuse structure. Although theantifuse-type of non-volatile memory element may only be programmedonce, other non-volatile memories can be programmed multiple times(e.g., re-writable). For example, one example of a re-writable memoryelement includes a diode and a re-writable element (e.g., metal oxidesor chalcogenides). Typically, the memory elements are arranged in anarray. In one embodiment, the memory elements can have athree-dimensional configuration in the array.

The memory element being programmed can relate to a non-volatile memorycell (i.e., a memory cell whose data is not lost or altered whenelectrical power is removed). Although any suitable memory array can beused, in one embodiment, the memory cell is part of a three-dimensionalmemory array, which can provide economies in terms of reduced size andassociated reductions in manufacturing cost. In one implementation, thememory array can include a vertical array of layers as memory cells(e.g., layers stacked vertically above one another on a single chip).The memory array can be part of a compact, modular memory device usedwith portable consumer electronic products. In one embodiment, thememory cell is field-programmable. A field-programmable memory cell is amemory cell that is fabricated in an initial, un-programmed digitalstate and can be switched to an alternative, programmed digital state ata time after fabrication. Although any suitable type of memory cell canbe used, in one embodiment, the memory cell is a write-once memory cellcomprising an antifuse and a diode, for example as described in U.S.Pat. No. 6,034,882 and U.S. Pat. No. 6,515,888, both of which are herebyincorporated by reference. In its un-programmed state, the antifuse isintact, and the memory cell holds a Logic 1. When suitable voltages areapplied to the appropriate wordline and bitline, the antifuse of thememory cell is blown, and the diode is connected between the wordlineand the bitline. This places the memory cell in a programmed (Logic 0)state. Alternatively, the un-programmed state of the memory cell can beLogic 0, and the programmed state can be Logic 1. Memory cells thatsupport multiple programmed states can also be used. Being write-once,the initial, un-programmed digital state cannot be restored once thememory cell is switched to the programmed digital state. Instead ofbeing write-once, the memory cell can be write-many (re-writeable).Unlike the digital state of a write-once memory cell, the digital stateof a write-many memory cell can be switched between “un-programmed” and“programmed” digital states. When referring to write-many memory cells,the un-programmed digital state refers to the digital state of thememory cell before a programming operation. Accordingly, theun-programmed digital state can refer to either Logic 0 or Logic 1 (in atwo-state memory cell) and does not necessarily refer to the digitalstate in which that memory cell was fabricated.

FIG. 3 is a block diagram of a memory programming system 300 accordingto one embodiment of the invention. The memory programming system 300includes a memory element 302. The memory element 302 is arepresentative memory element of numerous memory elements providedwithin an array of memory elements. The memory element 302 is selectedor accessed by a wordline selection path 304 and a bitline selectionpath 306. The bitline selection path 306 couples between the memoryelement 302 and a decoded line (DL) 308. The decoded line 308 representsone of numerous decoded lines provided within the array of mediaelements. The decoded line 308 typically is capable of being coupled toa large number of the memory elements within the array of memoryelements, though only a single memory element is depicted in FIG. 3. Asa result, the decoded line 308 has a significant amount of capacitanceassociated with it. Consequently, prior to performing a programoperation (or write operation), a precharge phase is utilized in orderto raise the voltage potential at the decoded line 308 to theappropriate level for programming. As one example, the programmingvoltage could be about nine (9) Volts. In this regard, the memoryprogramming system 300 includes a precharge current (Ipc) source 310coupled to a voltage potential V2 which provides the precharge voltage.The precharge current (Ipc) source 310 controllably couples to thedecoded line 308 through a switch 312. The switch 312 allows theprecharge current (Ipc) to be either coupled to the decoded line 308 ordecoupled from the decoded line 308. The switch 312 is controlled by abitline precharge (BLP) signal. Here, the bitline selection path 306 iscontrolled by a bitline selection (BLS) signal such that the memoryelement 302 is isolated from the decoded line 308 during precharge ofthe decoded line 308. During the precharge phase, the bitline selectionpath 306 would be controlled by the bitline selection (BLS) signal todisconnect the memory element 302 from the decoded line 308.

Then, once the decoded line 308 has been precharged, the bitlineprecharge (BLP) signal would cause the precharge current source 310 tobe disconnected from the decoded line 308. At this point, a programcurrent (Ip) source 314 would provide a program current (Ip) to thedecoded line 308. The program current (Ip) source 314 is coupled to avoltage potential V1 which represents a program voltage. The programcurrent (Ip) would then be coupled to the memory element 302 by way ofthe bitline selection path 306. Here, the bitline selection path 306would be controlled by the bitline selection (BLS) signal to couple thedecoded line 308 to the memory element 302. Once the memory element hasbeen programmed, the program current (Ip) can be decoupled from thememory element. Although the voltages V1 and V2 can be different, in oneembodiment, they are the same.

FIG. 4 is a block diagram of a memory programming system 400 accordingto one embodiment of the invention. The memory programming system 400represents one implementation for the memory program system 300illustrated in FIG. 3.

The memory programming system 400 includes a memory array 402 thatincludes a plurality of memory cells (memory elements). A particularmemory cell 404 to be programmed can be accessed by a wordline selectionpath 406 in combination with a bitline selection path 408. One or moresense amplifiers 410 can be coupled to a particular decoded line 412 toallow the memory cells to be programmed, read, or otherwise accessed.The bitline selection path 408 can couple to a plurality of bitlines,one or more of which can connect with the particular decoded line 412illustrated in FIG. 4. The decoded line 412 is coupled to not only thebitline selection path 408 but also a precharge circuit 414 and aprogram circuit 416. The precharge circuit 414 is selectively controlledby a bitline precharge (BLP) signal to provide precharging of thedecoded line 412 prior to programming the particular memory cell 404.During precharge, the precharge circuit 414 provides (e.g., couples) aprecharge current (and precharge voltage) to the decoded line 412. Onceprecharge ends, the precharge current (and precharge voltage) are nolonger provided (e.g., coupled) to the decoded line 412. Following theprecharge by the precharge circuit 414, the program circuit 416 providesa program current (and program voltage) to the decoded line 412 so thatthe identified memory cell 404 can be programmed through use of theprogram current.

FIG. 5 is a timing diagram 500 according to one embodiment of theinvention. The timing diagram illustrated in FIG. 5 concerns programminga memory element. For example, the memory element can represent thememory element 302 illustrated in FIG. 3 or the memory element 404illustrated in FIG. 4. The timing diagram can, for example, implementthe memory device programming process 200 illustrated in FIG. 2.

A bitline selection (BLS) signal controls whether the memory element iscoupled or decoupled to a particular decoded line being used to access amemory element to be programmed. The BLS signal disconnects the memoryelement from the particular decoded line at transition 502. Then, abitline precharge (BLP) signal starts precharging the decoded line attransition 504. For example, at the transition 504, the BLP signal canstart precharging the particular decoded line by coupling to a prechargecurrent source (and a precharge voltage). Also, programming of one ormore memory cells can be enabled at transition 506 of a write enable(WRITE_ENABLE) signal. Following the transition 504 of the BLP signal,the voltage (Vdl) of the particular decoded line increases in accordancewith a ramp 508 which represents precharging of the decoded line havingsignificant capacitance. At transition 512 of the BLP signal, theprecharging of the decoded line stops. The precharging of the decodedline can be monitored to determine when it has reached the desiredvoltage level or the precharging duration can be empirically determined.Regardless, when precharge of the decoded line ends, the voltage (Vdl)on the decoded line is at a program voltage level at point 514.

Additionally, during precharge, a current (Idl) applied to the decodedline is at a precharge current level 510 during the precharge phase. Thememory is, however, disconnected from the decoded line during prechargeso that the current (Idl) does not couple to the memory element.However, when the transition 512 of the BLP signal causes the prechargeprocess to end, the current (Idl) transitions 516 to having essentiallyno current being applied to the memory element. Then, at transition 518of the BLS signal, the memory element is connected to the prechargeddecoded line. At this point, the voltage (Vdl) on the decoded line(decoded line voltage) drops slightly at point 520 due to thecapacitance of the bitline selection path now coupled to the decodedline. The memory element is then programmed by the voltage (Vdl) on thebitline (e.g., program voltage) and a program current 522 (writecurrent) is supplied to the bitline. The amount of the program current522 that passes through the memory element is dependent on the degree ofthe programming of the memory element. Although the voltage (Vdl) on thedecoded line is provided across the memory element to be programmed,until the memory element is programmed, the current through the memoryelement is essentially zero. Once the memory element is programmed, thememory element conducts the current up to the limit set by the programcurrent (write current).

For various reasons, there is a distribution of different program timesfor memory elements (e.g., antifuse-type non-volatile memory cells).Some memory elements are quick to become programmed, while others areslower to program. A program window 524 is shown in FIG. 5 correlated tothe voltage (Vdl) and the current (Idl). Memory elements quicker tobecome programmed are represented towards the left of the program window524, which means such memory elements are earlier to conduct the programcurrent and earlier to reduce the voltage (Vdl). On the other hand,memory elements slower to program are represented towards the right ofthe program window 524, which means such memory elements are slower toconduct the program current and slower to reduce the voltage (Vdl).

The invention can be used with two-terminal memory cells. Two-terminalmemory cells, for example, can be formed from polysilicon diodes,transition metal oxide (e.g., NiO) memory elements, andchalcogenide-based memory elements. Two-terminal memory arrays can beformed in a compact manner when arranged into cross-point memory arrays.Additional details on some two-terminal memory cells are provided in thefollowing papers which are hereby incorporated herein by reference: (i)Pirovano et al., “Electronic Switching in Phase-Change Memories,” IEEETransactions on Electronic Devices, Vol. 51, No. 3, March 2003; (ii)Baek et al., “Multi-layer Cross-point Binary Oxide Resistive Memory(OxRRAM) for Post-NAND Storage Application,” IEEE International ElectronDevices Meeting, IEEE, 2005; (iii) Baek et al., “Highly ScalableNon-volatile Resistive Memory using Simple Binary Oxide Driven byAsymmetric Unipolar Voltage Pulses,” IEEE International Electron DevicesMeeting, IEEE 2004; and (iv) Hwang et al., “Writing Current Reductionfor High-density Phase-change RAM,” IEEE International Electron DevicesMeeting, IEEE, 2003. Additional details are also provided in U.S. Pat.No. 6,891,748, which is hereby incorporated herein by reference.

Additional information on detecting whether a memory cell beingprogrammed is in a programmed state are provided in U.S. Pat. No.6,574,145, which is hereby incorporated herein by reference. Foradditional information on current protection of memory elements, see (i)U.S. patent application Ser. No. 11/552,441, filed Oct. 24,2006, andentitled “METHOD FOR PROTECTING MEMORY CELLS DURING PROGRAMMING”, whichis hereby incorporated herein by reference; and (ii) U.S. patentapplication Ser. No. 11/552,426, filed Oct. 24, 2006, and entitled“MEMORY DEVICE FOR PROTECTING MEMORY CELLS DURING PROGRAMMING”, which ishereby incorporated herein by reference.

The invention is suitable for use with both single-level (binary)memories and multi-level (multi-state) memories. In multi-levelmemories, each data storage element stores two or more bits of data. Inone embodiment, through accurate current control, different values ofprogramming currents can be used to program the different levels inmulti-level memories.

The various features, aspects, embodiments or implementations can beused alone or in any combination.

The invention can further pertain to an electronic system that includesa memory system as discussed above. A memory system is a system thatincludes at least a memory device that provides data storage. Memorysystems (i.e., memory cards) are commonly used to store digital data foruse with various electronics products. The memory system is oftenremovable from the electronic system so the stored digital data isportable. The memory systems according to the invention can have arelatively small form factor and be used to store digital data forelectronics products (e.g., consumer electronic products) that acquiredata, such as cameras, hand-held or notebook computers, network cards,network appliances, set-top boxes, hand-held or other small media (e.g.,audio) players/recorders (e.g., MP3 devices), personal digitalassistants, mobile telephones, and medical monitors.

The advantages of the invention are numerous. Different embodiments orimplementations may yield one or more of the following advantages. Oneadvantage of the invention is that memory elements to be programmed canbe rapidly precharged, without undesirably damaging or programming thememory elements during such precharging. Another advantage of theinvention is that memory elements can be isolated during a prechargephase. Still another advantage of the invention is that a programcurrent used to program memory elements can be accurately controlledduring programming.

The many features and advantages of the present invention are apparentfrom the written description. Further, since numerous modifications andchanges will readily occur to those skilled in the art, it is notdesired to limit the invention to the exact construction and operationas illustrated and described. Hence, all suitable modifications andequivalents may be resorted to as falling within the scope of theinvention.

1. A method for programming a memory device, said method comprising:determining a non-volatile memory element within the memory device thatis to be programmed; isolating the non-volatile memory element from aconductive line that is used to carry electrical energy to program thenon-volatile memory element; precharging, subsequent to said isolating,the conductive line to an energy level suitable for programming thenon-volatile memory element; coupling, subsequent to said precharging,the non-volatile memory element to the conductive line; and programming,subsequent to said coupling, the non-volatile memory element via theconductive line.
 2. A method as recited in claim 1, wherein saidprogramming comprises: applying a program current to the non-volatilememory element via the conductive line to program the non-volatilememory element.
 3. A method as recited in claim 1, wherein saidprogramming comprises: applying a program current to the non-volatilememory element via the conductive line to program the non-volatilememory element; determining whether the non-volatile memory element hasbeen programmed; and removing the program current from being applied tothe non-volatile memory element after the non-volatile memory elementhas been programmed.
 4. A method as recited in claim 3, wherein saiddetermining whether the non-volatile memory element has been programmedcomprises: monitoring the program current passing through thenon-volatile memory element; and determining that the non-volatilememory element has been programmed when the program current beingmonitored reaches a predetermined level.
 5. A method as recited in claim1, wherein during said precharging a precharge current is supplied tothe conductive line.
 6. A method as recited in claim 5, wherein theprogram current is less than one-half that of the precharge current. 7.A method as recited in claim 1, wherein said precharging operates toprecharge the conductive line to a predetermined voltage level.
 8. Amethod as recited in claim 1, wherein said precharging operates for apredetermined period of time.
 9. A method as recited in claim 1, whereinthe non-volatile memory element is within a memory array of non-volatilememory elements.
 10. A method as recited in claim 9, wherein thenon-volatile memory element is a diode-based memory element.
 11. Amethod for programming a memory device, said method comprising:isolating a memory element from a decoded line; coupling a prechargecurrent to the decoded line; determining whether the decoded line hasbeen precharged; decoupling the precharge current from the decoded lineafter said determining determines that the decoded line has beenprecharged; thereafter coupling the memory element to the decoded line;providing a program current to the memory element via the decoded lineto program the memory element; determining whether the memory elementhas been programmed; and removing the program current once saiddetermining determines that the memory element has been programmed. 12.A method as recited in claim 11, wherein said determining whether thedecoded line has been precharged comprises determining whether theprecharge current has been applied for a predetermined period of time.13. A method as recited in claim 11, wherein the memory element is anon-volatile memory element that is within a memory array ofnon-volatile memory elements.
 14. A method as recited in claim 13,wherein the non-volatile memory elements within the memory array arediode-based memory elements.
 15. A method as recited in claim 13,wherein the non-volatile memory elements within the memory array aretwo-terminal memory elements.